SAMSUNG REVEALS NEW 3D-MEMORY ROADMAP, BETTING ON STACKING MEMORY DIRECTLY ATOP AI CHIPS

Summary from the TLDR Hardware newsletter

At FMS 2026, Samsung unveiled zHBM, a concept architecture that vertically stacks HBM directly on top of an AI accelerator instead of placing it alongside the chip, shortening the distance data travels and targeting roughly 8x the performance of next-gen HBM5 alongside more than 10x the memory density, using advanced wafer-bonding technology. Samsung also showed zNAND-O, an edge-AI-focused NAND design combining high space efficiency with low latency, and V10 BV-NAND, a bonding-based V-NAND architecture breaking past 400 layers for the first time, a roughly 58% density jump over its prior generation.